unisonic technologies co., ltd 2sc4774 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2015 unisonic technologies co., ltd qw-r220-017.c high frequency amplifier transistor, rf switching (6v, 50ma) ? features * very low output-on resistance (r on ). * low capacitance. ? ordering information order number package pin assignment packing 1 2 3 2sc4774g-ab3-r sot-323 e b c tape reel note: pin assignment: e: emitter b: base c: collector ? marking c47g
2sc4774 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r220-017.c ? absolute maximum ratings (t a =25 ? c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 12 v collector-emitter voltage v ceo 6 v emitter-base voltage v ebo 3 v collector current i c 50 ma collector power dissipation p d 0.2 w junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical specifications (t a =25 ? c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =10 a 12 v collector-emitter breakdown voltage bv ceo i c =1ma 6 v emitter-base breakdown voltage bv ebo i e =10 a 3 v collector-emitter satu ration voltage v ce ( sat ) i c /i b =10ma/1ma 0.3 v collector cutoff current i cbo v cb =10v 0.5 a emitter cutoff current i ebo v eb =2v 0.5 a dc current transfer ratio h fe v ce /i c =5v/5ma 270 560 transition frequency f t v ce =5v, i e = ? 10ma, f=200mhz 300 800 mhz output capacitance c ob v cb =10v, i e =0a, f=1mhz 1 1.7 pf output-on resistance r on i b =3ma, v in =100mvrms, f=500khz 2 ?
2sc4774 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r220-017.c ? typical characteristic 0 1 0 10 10ma ta=25 i b =0 a 8 6 4 2 2345 grounded emitter output characteristics ( ) collector to emitter voltage, v ce (v) collector current, i c (ma) 5ma 15ma 20ma 25ma 30ma 35ma 0 0.1 0 50 ta=25 i b =0ma 40 30 grounded emitter output characteristics ( ) collector to emitter voltage, v ce (v) collector current, i c (ma) 0.1ma 0.2ma 0.3ma 20 10 0.2 0.3 0.4 0.5 0 . 4 m a 1 .0 m a 0 . 5 m a 25 collector current, i c (ma) -25 1 2 5 dc current transfer ratio, h fe
2sc4774 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r220-017.c ? typical characteristic(cont.) feeback capacitiance, c re (pf) output capacitiance, c ob (pf) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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